National Yunlin University of Science and Technology
Regist No
Patent No: R.O.C. US8,697,482
Date
2014-12-15
This invention utilizes the aluminum-induced crystallization (AIC) method to produce p-type poly-Si film on the backside of the inter-digitated back contact solar cells. The formation of the PN junctions on the backside of the solar cell is a relatively simple process that can lower the process cost and increase the conversion efficiency of the solar cell.
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