Method for manufacturing junction plane of solar cell through aluminum induced crystallization method
분야
컴퓨터/소프트웨어/전자/전기/통신
년도
2014
업체명
National Yunlin University of Science and Technology
등록번호
Patent No: R.O.C. US8,697,482
등록일
2014-12-15
This invention utilizes the aluminum-induced crystallization (AIC) method to produce p-type poly-Si film on the backside of the inter-digitated back contact solar cells. The formation of the PN junctions on the backside of the solar cell is a relatively simple process that can lower the process cost and increase the conversion efficiency of the solar cell.